| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 12 | |
| 12 | |
| 7 | |
| 0.09@0.01A@1A | |
| 0.012@0.01A@0.1A|0.07@0.1A@1A|0.1@0.01A@1A|0.17@0.02A@2A|0.24@0.03A@3A|0.26@0.4A@4A | |
| 5 | |
| 250@10mA@2V|250@500mA@2V|220@1A@2V|180@2A@2V|150@3A@2V | |
| 1500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | WDFN EP |
| 3 | |
| Forme de sonde | No Lead |
Implement this versatile PNP NSS12500UW3T2G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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