| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 12 | |
| 12 | |
| 5 | |
| 1.15@0.01A@1A | |
| 0.035@0.005A@0.05A|0.08@0.002A@0.1A|0.06@0.01A@0.1A|0.22@0.05A@0.5A|0.41@0.1A@1A | |
| 1 | |
| 100 | |
| 200@10mA@2V|120@500mA@2V|80@1A@2V | |
| 625 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.5 mm |
| Largeur du paquet | 0.8 mm |
| Longueur du paquet | 1.2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-723 |
| 3 | |
| Forme de sonde | Flat |
The three terminals of this PNP NSS12100M3T5G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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