onsemiNSBC143ZDXV6T1GBJT numérique
Trans Digital BJT NPN 50V 0.1A 500mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.1 | |
| 0.25@1mA@10mA | |
| 500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.55 mm |
| Largeur du paquet | 1.2 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-563 |
| 6 | |
| Forme de sonde | Flat |
Look no further than ON Semiconductor's NPN NSBC143ZDXV6T1G digital transistor, which can provide a solution to your digital signal processing needs. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Contrer efficacement les menaces des drones
Apprenez à combiner traitement intelligent, détection avancée et réponse rapide dans un système de défense unifié contre les drones.