onsemiNSBC114TDXV6T1GBJT numérique
Trans Digital BJT NPN 50V 0.1A 500mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 160@5mA@10V | |
| 10 | |
| -55 to 150 | |
| 0.25@5mA@10mA | |
| 500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| >=120 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.55 mm |
| Largeur du paquet | 1.2 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-563 |
| 6 | |
| Forme de sonde | Flat |
The NPN NSBC114TDXV6T1G digital transistor from ON Semiconductor is your alternative to traditional BJTs in that it can provide digital signal processing power. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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