onsemiNGTG35N65FL2WGPuce IGBT
Trans IGBT Chip N-CH 650V 70A 300W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| NGTG35N65FL2WG | |
| Automotive | No |
| PPAP | No |
| Field Stop II|Trench | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.7 | |
| 70 | |
| 0.2 | |
| 300 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 21.34(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.25(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
The NGTG35N65FL2WG IGBT transistor from ON Semiconductor will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 300000 mW. This device utilizes field stop ii|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |
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