| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 620 | |
| ±30 | |
| 4.4 | |
| 2000@10V | |
| 19@10V | |
| 19 | |
| 535@25V | |
| 28000 | |
| 14 | |
| 13 | |
| 25 | |
| 12 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 15.3(Max) mm |
| Largeur du paquet | 4.7(Max) mm |
| Longueur du paquet | 10.3(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's NDF04N62ZG power MOSFET can provide a solution. Its maximum power dissipation is 28000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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