| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| NDD03N60Z1G | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 30 | |
| 2.6 | |
| 3600@10V | |
| 12@10V | |
| 12 | |
| 312@25V | |
| 61000 | |
| 10 | |
| 8 | |
| 16 | |
| 9 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 6.35(Max) mm |
| Largeur du paquet | 2.38(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 | |
| Forme de sonde | Through Hole |
Amplify electronic signals and switch between them with the help of ON Semiconductor's NDD03N60Z-1G power MOSFET. Its maximum power dissipation is 61000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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