onsemiNCV1413BDR2GDarlington BJT
Trans Darlington NPN 50V 0.5A Automotive 16-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Array 7 | |
| 7 | |
| 50 | |
| 30 | |
| 0.5 | |
| 0.025 | |
| 150 | |
| 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA | |
| 1000@350mA@2V | |
| -40 | |
| 125 | |
| Tape and Reel | |
| Automotive | |
| 500 to 3600 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.37 mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 9.9 mm |
| Carte électronique changée | 16 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 16 | |
| Forme de sonde | Gull-wing |
ON Semiconductor brings you their latest NPN NCV1413BDR2G Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 1000@350mA@2 V. It has a maximum collector emitter saturation voltage of 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 50 V. This Darlington transistor array has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |
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