| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| Low Side | |
| Inverting|Non-Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 4(Typ) | |
| 4(Typ) | |
| 15(Typ) | |
| CMOS|TTL | |
| 4.5 | |
| 20 | |
| 1.2(Typ) | |
| 10(Typ) | |
| 0.4 | |
| -40 | |
| 140 | |
| Under Voltage Lockout | |
| Yes | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
If you are working with high voltage transistors, implement this NCP81074BDR2G power driver from ON Semiconductor to switch states. Its typical operating supply voltage is 1.2|3.3 V. This device has a maximum propagation delay time of flash ns and a maximum power dissipation of 41 mW. Its maximum power dissipation is 41 mW. This device has a typical operating supply voltage of 1.2|3.3 V. Its minimum operating supply voltage of RISC V, while its maximum is 1.26|3.47 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 105 °C.
| EDA / CAD Models |
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