onsemiNCP5351MNR2GPilotes de porte et de puissance
Driver 4A 2-OUT High Side/Low Side Inv/Non-Inv 10-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8542330001 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Inverting|Non-Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 16 | |
| 21 | |
| 80 | |
| -0.3 | |
| 6.3 | |
| 1(Typ) | |
| 0.8(Max) | |
| 2(Min) | |
| 4(Typ) | |
| 0.6|0.5 | |
| -30 | |
| 85 | |
| Enable Control|Thermal Protection|Undervoltage Lockout | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) |
| Largeur du paquet | 3 |
| Longueur du paquet | 3 |
| Carte électronique changée | 10 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN EP |
| 10 | |
| Forme de sonde | No Lead |
Change state in a high power transistor by implementing this NCP5351MNR2G power driver by ON Semiconductor. This device has a maximum propagation delay time of 80 ns. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This gate driver has an operating temperature range of -30 °C to 85 °C. This device has a minimum operating supply voltage of -0.3 V and a maximum of 6.3 V.
| EDA / CAD Models |
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