| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 60@5mA@10V | |
| 22 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 338 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.09 |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-59 |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to traditional BJ transistors, the NPN MUN2212T1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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