onsemiMUN2212T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 60@5mA@10V | |
| 22 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 338 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.09 mm |
| Package Width | 1.5 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-59 |
| 3 | |
| Lead Shape | Gull-wing |
Compared to traditional BJ transistors, the NPN MUN2212T1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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