| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±15 | |
| 4 | |
| 30 | |
| 100 | |
| 10 | |
| 80@10V | |
| 54@10V | |
| 54 | |
| 1562@25V | |
| 3000 | |
| 52.4 | |
| 25.9 | |
| 98 | |
| 14.7 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) |
| Largeur du paquet | 9.65(Max) |
| Longueur du paquet | 10.29(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The MTB30P06VT4G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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