MagnaChip SemiconductorMMF60R190PTHMOSFET
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 20 | |
| 100 | |
| 1 | |
| 190@10V | |
| 51@10V | |
| 51 | |
| 1630@25V | |
| 34000 | |
| 47 | |
| 73 | |
| 146 | |
| 32 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 16.13(Max) |
| Largeur du paquet | 4.93(Max) |
| Longueur du paquet | 10.71(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220F |
| 3 | |
| Forme de sonde | Through Hole |
Thanks to MagnaChip Semiconductor, both your amplification and switching needs can be taken care of with one component: the MMF60R190PTH power MOSFET. Its maximum power dissipation is 34000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with super junction technology.
| EDA / CAD Models |
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