MagnaChip SemiconductorMME60R290PRHMOSFET
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 13 | |
| 100 | |
| 1 | |
| 290@10V | |
| 32@10V | |
| 32 | |
| 1001@25V | |
| 104000 | |
| 33 | |
| 45 | |
| 90 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.65(Max) mm |
| Longueur du paquet | 10.67(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this MME60R290PRH power MOSFET from MagnaChip Semiconductor. Its maximum power dissipation is 104000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes super junction technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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