MagnaChip SemiconductorMMD70R900PRHMOSFET
Trans MOSFET N-CH 700V 5A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 700 | |
| ±30 | |
| 4 | |
| 5 | |
| 100 | |
| 1 | |
| 900@10V | |
| 15@10V | |
| 15 | |
| 430@25V | |
| 40000 | |
| 21 | |
| 25 | |
| 37 | |
| 11 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) |
| Largeur du paquet | 6.1 |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common source amplifier using this MMD70R900PRH power MOSFET from MagnaChip Semiconductor. Its maximum power dissipation is 40000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with super junction technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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