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onsemiMMBTH10LT1GBJT FR
Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Si | |
| Single | |
| 1 | |
| 30 | |
| 25 | |
| 20 to 30 | |
| 0.5@0.4mA@4mA | |
| 3 | |
| 100 | |
| 100 | |
| 60@4mA@10V | |
| 50 to 120 | |
| 556 | |
| 0.7(Max) | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's NPN MMBTH10LT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 3 V.
| EDA / CAD Models |
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