| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 160 | |
| 150 | |
| 5 | |
| -55 to 150 | |
| 1@1mA@10mA|1@5mA@50mA | |
| 0.2@1mA@10mA|0.5@5mA@50mA | |
| 0.5 | |
| 50 | |
| 50@1mA@5V|60@10mA@5V|50@50mA@5V | |
| 400 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.85 mm |
| Largeur du paquet | 1.24 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 3 | |
| Forme de sonde | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MMBT5401WT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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