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onsemiMMBT3906LT1GGP BJT
Trans GP BJT PNP 40V 0.2A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 5 | |
| -65 to 150 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.25@1mA@10mA|0.4@5mA@50mA | |
| 0.2 | |
| 100@10mA@1V|60@50mA@1V|30@100mA@1V|60@0.1mA@1V|80@1mA@1V | |
| 300 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this PNP MMBT3906LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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