| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Single | |
| JFET | |
| Depletion | |
| N | |
| 1 | |
| 25 | |
| 25 | |
| 1 | |
| 30000 | |
| 5(Max)@0V | |
| 2.5(Max)@0V | |
| 0.018(Max) | |
| 225 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
The unique design of this MMBFJ309LT1G JFET from ON Semiconductor gives it the versatility to be used as an electrical switch, amplifier, or voltage-controlled resistor in your electronic circuit design. Its maximum power dissipation is 225 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This junction field effect transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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