| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 230 | |
| 230 | |
| 5 | |
| 2@1A@10A | |
| 15 | |
| 50@100mA@5V|50@1A@5V|50@3A@5V|50@5A@5V|50@7A@5V|45@8A@5V|12@15A@5V | |
| 200000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 21.08(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.26(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MJW3281AG general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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