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onsemiMJL21196GGP BJT
Trans GP BJT NPN 250V 16A 200000mW 3-Pin(3+Tab) TO-264 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 400 | |
| 250 | |
| 5 | |
| 1.4@0.8A@8A|4@3.2A@16A | |
| 16 | |
| 25@8A@5V | |
| 200000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 26.4(Max) mm |
| Largeur du paquet | 5.2(Max) mm |
| Longueur du paquet | 20.2(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264 |
| 3 | |
| Forme de sonde | Through Hole |
The versatility of this NPN MJL21196G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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