| Compliant with Exemption | |
| EAR99 | |
| Active | |
| MJE5731AG | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 375 | |
| 375 | |
| 5 | |
| -65 to 150 | |
| 1@0.2A@1A | |
| 1 | |
| 30@300mA@10V|10@1A@10V | |
| 40000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 8.9 mm |
| Largeur du paquet | 4.45 mm |
| Longueur du paquet | 10.1 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Design various electronic circuits with this versatile PNP MJE5731AG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 375 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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