| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 250 | |
| 250 | |
| 5 | |
| -65 to 150 | |
| 2 | |
| 0.5@0.1A@1A | |
| 8 | |
| 10000 | |
| 70@500mA@5V|50@1A@5V|10@2A@5V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 8.9 mm |
| Largeur du paquet | 4.45 mm |
| Longueur du paquet | 10.1 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
This specially engineered NPN MJE15032G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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