| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 500 | |
| 400 | |
| 5 | |
| -65 to 150 | |
| 0.6 | |
| 1@0.2A@1A | |
| 1 | |
| 30@300mA@10V|10@1A@10V | |
| 1560 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.28 |
| Largeur du paquet | 6.1 |
| Longueur du paquet | 6.54 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN MJD50G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1560 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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