STMicroelectronicsMJD3055T4GP BJT
Trans GP BJT NPN 60V 10A 20000mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 70 | |
| 60 | |
| 5 | |
| 1.1@0.4A@4A|8@3.3A@10A | |
| 10 | |
| 20000 | |
| 20@4A@4V|5@10A@4V | |
| 20000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) mm |
| Largeur du paquet | 6.2(Max) mm |
| Longueur du paquet | 6.6(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the NPN MJD3055T4 BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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