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onsemiMJD112T4GDarlington BJT
Trans Darlington NPN 100V 2A 1750mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 12000@2A@3V | |
| 100 | |
| 100 | |
| 5 | |
| 4@40mA@4A | |
| 2 | |
| 20 | |
| 0.05 | |
| -65 to 150 | |
| 25(Min) | |
| 2@8mA@2A|3@40mA@4A | |
| 500@0.5A@3V|1000@2A@3V|200@4A@3V | |
| 1750 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| <500|500 to 3600 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Amplify your current using ON Semiconductor's NPN MJD112T4G Darlington transistor in order to yield a higher current gain. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 1750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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