| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 400 | |
| 250 | |
| 5 | |
| -65 to 200 | |
| 5 | |
| 1.4@800mA@8A|4@3.2A@16A | |
| 16 | |
| 15@8A@4V|5@16A@4V | |
| 250000 | |
| -65 | |
| 200 | |
| Tray | |
| Installation | Through Hole |
| Hauteur du paquet | 7.43 |
| Largeur du paquet | 26.67(Max) |
| Longueur du paquet | 39.37 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3 |
| 3 | |
| Forme de sonde | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this NPN MJ15024G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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