| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 140 | |
| 140 | |
| 5 | |
| -65 to 200 | |
| 5 | |
| 1@0.5A@5A | |
| 20 | |
| 25@5A@2V | |
| 250000 | |
| -65 | |
| 200 | |
| Tray | |
| Installation | Through Hole |
| Hauteur du paquet | 7.43 |
| Largeur du paquet | 26.67(Max) |
| Longueur du paquet | 39.37 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3 |
| 3 | |
| Forme de sonde | Through Hole |
If you require a general purpose BJT that can handle high voltages, then the NPN MJ15003G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250000 mW. The item will be shipped in tray orientation. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.