| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 140 | |
| 140 | |
| 5 | |
| -65 to 200 | |
| 5 | |
| 1@0.5A@5A | |
| 20 | |
| 25@5A@2V | |
| 250000 | |
| -65 | |
| 200 | |
| Tray | |
| Mounting | Through Hole |
| Package Height | 7.43 |
| Package Width | 26.67(Max) |
| Package Length | 39.37 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3 |
| 3 | |
| Lead Shape | Through Hole |
If you require a general purpose BJT that can handle high voltages, then the NPN MJ15003G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250000 mW. The item will be shipped in tray orientation. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |
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