onsemiMJ11028GDarlington BJT
Trans Darlington NPN 60V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 3@200mA@25A|4.5@300mA@50A | |
| 50 | |
| 2.5@250mA@25A|3.5@500mA@50A | |
| 1000@25A@5V|400@50A@5V | |
| 300000 | |
| -55 | |
| 200 | |
| Tray | |
| Installation | Through Hole |
| Hauteur du paquet | 8.51(Max) mm |
| Largeur du paquet | 26.67(Max) mm |
| Longueur du paquet | 38.86 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-204 |
| 3 |
Amplify your current with the NPN MJ11028G Darlington transistor, developed by ON Semiconductor. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3@200mA@25A|4.5@300mA@50A V. This product's maximum continuous DC collector current is 50 A, while its minimum DC current gain is 1000@25A@5 V|400@50A@5V. It has a maximum collector emitter saturation voltage of 2.5@250mA@25A|3.5@500mA@50A V. Its maximum power dissipation is 300000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This Darlington transistor array has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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