MagnaChip SemiconductorMDV1528URHMOSFET
Trans MOSFET N-CH 30V 10.1A 8-Pin Power DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.7 | |
| 10.1 | |
| 100 | |
| 1 | |
| 18.8@10V | |
| 3.5@4.5V|7.3@10V | |
| 7.3 | |
| 456@15V | |
| 3400 | |
| 2.9 | |
| 3.2 | |
| 13.8 | |
| 5.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) mm |
| Largeur du paquet | 3.2(Max) mm |
| Longueur du paquet | 3.2(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | Power DFN EP |
| 8 |
Make an effective common source amplifier using this MDV1528URH power MOSFET from MagnaChip Semiconductor. Its maximum power dissipation is 3400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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