| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 60 | |
| ±20 | |
| 3 | |
| 4.5 | |
| 100 | |
| 1 | |
| 50@10V | |
| 4.4@4.5V|9@10V | |
| 9 | |
| 420@30V | |
| 2000 | |
| 9.5 | |
| 20 | |
| 15 | |
| 4.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the MDS5951URH power MOSFET from MagnaChip Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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