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MagnaChip SemiconductorMDP1932THMOSFET
Trans MOSFET N-CH Si 80V 175A 3-Pin(3+Tab) TO-220 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 4 | |
| 175 | |
| 100 | |
| 1 | |
| 3.4@10V | |
| 105@10V | |
| 105 | |
| 7200@40V | |
| 209000 | |
| 30 | |
| 65 | |
| 48 | |
| 31 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 9.65(Max) mm |
| Largeur du paquet | 4.83(Max) mm |
| Longueur du paquet | 10.67(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Increase the current or voltage in your circuit with this MDP1932TH power MOSFET from MagnaChip Semiconductor. Its maximum power dissipation is 209000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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