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MagnaChip SemiconductorMDP18N50BTHMOSFET
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 4 | |
| 18 | |
| 100 | |
| 1 | |
| 270@10V | |
| 48@10V | |
| 48 | |
| 2490@25V | |
| 236000 | |
| 75 | |
| 82 | |
| 222 | |
| 32 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 9.65(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.67(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Thanks to MagnaChip Semiconductor, both your amplification and switching needs can be taken care of with one component: the MDP18N50BTH power MOSFET. Its maximum power dissipation is 236000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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