onsemiMC34152DR2GPilotes de porte et de puissance
Driver 1.5A 2-OUT High Speed Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Non-Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 36(Typ) | |
| 32(Typ) | |
| 55(Typ) | |
| CMOS|LSTTL | |
| 6.1 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 560 | |
| 0 | |
| 70 | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
Switch between states in a high power transistor by using this MC34152DR2G power driver developed by ON Semiconductor. This device has a maximum propagation delay time of 55(typ) ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has an operating temperature range of 0 °C to 70 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
| EDA / CAD Models |
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