| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 40 | |
| 40 | |
| 5 | |
| -55 to 150 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.25@1mA@10mA|0.4@5mA@50mA | |
| 0.2 | |
| 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 mm |
| Largeur du paquet | 1.25 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88 |
| 6 |
If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP MBT3906DW1T1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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