| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 0.8(Min) | |
| 21000@0V | |
| 14.6@5V | |
| 325@25V | |
| 60000 | |
| 48 | |
| 57 | |
| 34 | |
| 28 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXTY08N100D2 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 60000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.