| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4.5 | |
| 150 | |
| 200 | |
| 200 | |
| 10 | |
| 11@10V | |
| 540@10V | |
| 540 | |
| 226 | |
| 115 | |
| 3000 | |
| 23000@25V | |
| 610@25V | |
| 2 | |
| 3200 | |
| 1040000 | |
| 27 | |
| 225 | |
| 127 | |
| 40 | |
| -55 | |
| 150 | |
| Tube | |
| 500 | |
| 6 | |
| 245 | |
| 1.4 | |
| 20 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.34(Max) mm |
| Largeur du paquet | 5.21(Max) mm |
| Longueur du paquet | 16.13(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | ISOPLUS 247 |
| 3 |
Compared to traditional transistors, IXTX200N10L2 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1040000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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