| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 40 | |
| 170@10V | |
| 320@10V | |
| 320 | |
| 10400@25V | |
| 540000 | |
| 44 | |
| 133 | |
| 127 | |
| 50 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 5.1(Max) |
| Largeur du paquet | 14(Max) |
| Longueur du paquet | 16.05(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-268 |
| 3 |
This IXTT40N50L2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 540000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes linear l2 technology.
| EDA / CAD Models |
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