| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 30 | |
| 200@10V | |
| 70@10V | |
| 70 | |
| 4150@25V | |
| 460000 | |
| 21 | |
| 27 | |
| 75 | |
| 25 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 5.1(Max) |
| Largeur du paquet | 14(Max) |
| Longueur du paquet | 16.05(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-268 |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXTT30N50P power MOSFET can provide a solution. Its maximum power dissipation is 460000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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