| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 170 | |
| 9@10V | |
| 198@10V | |
| 198 | |
| 6000@25V | |
| 715000 | |
| 33 | |
| 50 | |
| 90 | |
| 35 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Largeur du paquet | 4.9(Max) |
| Longueur du paquet | 15.8(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3P |
| 3 | |
| Forme de sonde | Through Hole |
Create an effective common drain amplifier using this IXTQ170N10P power MOSFET from Ixys Corporation. Its maximum power dissipation is 714000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with polar technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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