| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 85 | |
| ±15 | |
| 96 | |
| 13@10V | |
| 180@10V | |
| 180 | |
| 13100@25V | |
| 298000 | |
| 22 | |
| 34 | |
| 45 | |
| 23 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.66(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 |
Make an effective common gate amplifier using this IXTP96P085T power MOSFET from Ixys Corporation. Its maximum power dissipation is 298000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with trenchp technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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