| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 60 | |
| 18@10V | |
| 49@10V | |
| 49 | |
| 2650@25V | |
| 176000 | |
| 37 | |
| 40 | |
| 43 | |
| 27 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.4(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.3(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXTP60N10T power MOSFET. Its maximum power dissipation is 176000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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