| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| 50 | |
| 60@10V | |
| 78@10V | |
| 78 | |
| 4000@25V | |
| 400000 | |
| 25 | |
| 25 | |
| 47 | |
| 14 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.66(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXTP50N25T power MOSFET. Its maximum power dissipation is 400000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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