| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 26 | |
| 170@10V | |
| 56@10V | |
| 56 | |
| 2740@25V | |
| 300000 | |
| 21 | |
| 33 | |
| 46 | |
| 18 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.66(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXTP26P20P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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