| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 220 | |
| 3.5@10V | |
| 112@10V | |
| 112 | |
| 6820@25V | |
| 360000 | |
| 21 | |
| 21 | |
| 31 | |
| 15 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.66(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
As an alternative to traditional transistors, the IXTP220N04T2 power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 360000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with trencht2 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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