| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 46 | |
| 160@20V | |
| 260@15V | |
| 7000@25V | |
| 700000 | |
| 42 | |
| 50 | |
| 80 | |
| 40 | |
| -55 | |
| 150 | |
| Installation | Screw |
| Largeur du paquet | 25.42(Max) |
| Longueur du paquet | 38.23(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-227B |
| 4 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXTN46N50L power MOSFET. Its maximum power dissipation is 700000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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