| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 180 | |
| 11@10V | |
| 240@10V | |
| 240 | |
| 7000@25V | |
| 800000 | |
| 36 | |
| 32 | |
| 150 | |
| 30 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 26.16(Max) |
| Largeur du paquet | 5.13(Max) |
| Longueur du paquet | 19.96(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264AA |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IXTK180N15P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 800000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with polarht technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.