| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| 200 | |
| 5.5@10V | |
| 152@10V | |
| 152 | |
| 9400@25V | |
| 550000 | |
| 34 | |
| 31 | |
| 45 | |
| 35 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.26(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXTH200N10T power MOSFET. Its maximum power dissipation is 550000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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